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2SK1120 MOSFET N-Channel Power MOSFET TO-3PN Package - 1000V 8A
2SK1120 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
• RDS (ON) = 1.5 Ω (typ.)
• |Yfs| = 4.0 S (typ.)
• IDSS = 300 μA (max) (VDS = 800 V)
• 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 1.8Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 120 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 150W |
2SK1120 MOSFET N-Channel Power MOSFET TO-3PN Package - 1000V 8A
2SK1120 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
• RDS (ON) = 1.5 Ω (typ.)
• |Yfs| = 4.0 S (typ.)
• IDSS = 300 μA (max) (VDS = 800 V)
• 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 1.8Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 120 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 150W |